2010 - 2011 Conductance Model of ABA Staking Trilayer Graphene Nanoribbon (TGN) in TGNFET
Trilayer graphene is a semimetal with a resistivity that decreases with increasing electric field, a behaviour that is markedly different from that of single-layer and bilayer graphene. The phenomenon originates from an overlap between the conduction and valence bands that can be controlled by an electric field, a property that had never previously been observed in any other semimetal. In this project the conductance model of ABA Stacking Trilayer Graphene Nanoribbon (TGN) in TGNFET is presented. Computational Nanoelectronics (CoNE) Research Group, Electrical Engineering Faculty, Universiti Teknologi Malaysia (UTM).
2010 - 2011 Analytical Modeling of Carriers Mobility in Trilayer Graphene Nanoribbon (TGN)
The ability to print graphene sheets onto large scale, flexible substrates holds promise for large scale, transparent electronics on flexible substrates. The electrical conductivity and carrier motilities of this material are reported very high. Trilayer Graphene ABA staking of graphene shit also shows high carrier mobility in some experiments. Here, we show Analytical Modeling of Carriers Mobility in ABA Stacking Trilayer Graphene Nanoribbon (TGN) and the result is compare with the models which have been introduced by our group for carrier mobilities of Monolayer and Bilayer Graphene. Computational Nanoelectronics (CoNE) Research Group, Electrical Engineering Faculty, Universiti Teknologi Malaysia (UTM).
2010 - 2011 Optical Conductivity Modeling of Bilayer Graphene Nonoribbon (BGN)
In recent years, single layer graphene (SLG) has attracted a great deal of interest. Graphene has won the Nobel Prize in Physics for 2010. New physics has been predicted and observed, such as electron-hole symmetry and the half-integer quantum Hall effect, finite conductivity at zero charge-carrier concentration, and the strong suppression of weak localization. Bilayer graphene (BGN) has also attracted considerable attention recently, with seminal experimental and theoretical work being carried out. The optical properties of graphene systems are a topic of considerable interest mainly due to universal conductance. In this project the optical conductivity of bilayer graphene will be calculated. Computational Nanoelectronics (CoNE) Research Group, Electrical Engineering Faculty, Universiti Teknologi Malaysia (UTM.
2011 Schottky Current in Carbon Nanotube - Metal Contact
A potential barrier formed at a metal–semiconductor junction has rectify characteristics and suitable for use as a diode. Silicon based technology has received its technical limitation because of its unstable structure in nano-size. Carbon nanotube (CNTs) as an alternative material has attracted huge scientific efforts. CNTs shows excellent electrical properties for next-generation electronic applications such as carbon nanotube field-effect transistors, CNT diodes, single electron transistors and several others. Furthermore CNT with high carrier mobility, long mean free path, and potential of carrying high current density (which are better than currently used materials), have been attracted researchers to develop alternative devices to improve performance or explore the limitation of traditional structure. In this study, the current of metal – semiconductor contact diode where CNT used as the semiconductor part under applied voltage based on thermionic emission theory is presented. Parabolic band approximation on CNT induces Fermi-Dirac integral of order zero on its current voltage which is similar to the conventional one dimensional material. This model shows its current weekly depends on temperature in small applied voltage. Its temperature dependence is quite different in high bias voltages which are independent of temperature. Based on presented model incremental effect of the carbon nanotube diameter has been explained by increasing the current with the applied voltage. However, this device can be used in integrated circuit miniaturization. Computational Nanoelectronics (CoNE) Research Group, Electrical Engineering Faculty, Universiti Teknologi Malaysia (UTM).
2011 Modeling of Propagation Delay in an Unzipped Carbon Nanotube
Fundamental limitations of CMOS technology and anticipations of Moore’s law have motivated researchers to find suitable alternative for these devices. Several proposed alternatives such as nanowire, carbon nanotube and unzipped CNT (Graphene nanoribbon) have been proposed. Among them, Bi-layer Graphene nanoribbon (BGN) seemed to be a promising successor for CMOS devices due to their superior characteristics. It is possible to open a gap in BGNs band energy by applying a normal electric field on BGNs surface which can be controlled by the value of the applied voltage. Bi-layer Graphene nanoribbon transistor (BGNT) illustrates a higher on–off ratio because of inversion symmetry of the double-layer. This phenomenon proposes BGNTs as a future nanoelectronic device. However, the largest attainable gap is only a few hundreds of milielectronvolts, which make its use questionable for nanoelectronic applications. Therefore, the limits and potentials of bilayer Graphene still have to be explored. They require huge amount of processing power and time. On the other hand analytical model are fast and able to show relationships between different parameters. Several attempts have been done in order to model different properties of these devices using various approaches. However, there is still room for developing more analytical models to gain deeper insights into these nanoscale devices. This paper based on RC model presents a model to project propagation delay of an unzipped CNT in the form of bilayer Graphene nanoribbon transistor (BGNT). Two models for resistance and capacitance of BGNT have been developed. Resistance’s model is based on conductance and capacitance’s model which involves both quantum and classic capacitances. A simple dispersion relation has been used to derive equations for the carrier statistics and number of modes. In addition, by using approximation of Fermi Dirac integral in degenerate and non-degenerate regimes, each model has been presented in these regimes. Using the proposed model, the effect of influential factors on capacitance, conductance and propagation delay was studied and their profiles were provided. The proposed models can be helpful to project BGNT’s performance parameters and design them to be more efficient. Computational Nanoelectronics (CoNE) Research Group, Electrical Engineering Faculty, Universiti Teknologi Malaysia (UTM).
2010 Ballistic Conductance Model of Bilayer Graphene Nonoribbon (BGN) in BGN Field Effect Transistor
Ballistic conductance of Bilayer Graphene Nanoribbons (BGNs) was concerned in this work. Mathematical model and numerical solution of BGNs ballistic conductance was introduced as well as its analytical model in the degenerate regime. This method indicates that near the neutrality point the non-degenerate approximation can be properly used. In contrast, out of this boundary condition it is estimated to work in the degenerate regime. Moreover, it confirms that BGN conductance is temperature dependence near the neutrality point also minimum conductance is depended on temperature which increases by increasing temperature but beyond the neutrality point conductance is independent of temperature. Presented model showed good agreement by published experimental data. Computational Nanoelectronics (CoNE) Research Group, Electrical Engineering Faculty, Universiti Teknologi Malaysia (UTM).
2010 Carrier Statistics Model of Bilayer Graphene Nonoribbon (BGN)
In this work, numerical method on the carrier statistic of BGN was presented. Carrier density as a fundamental parameter in corporate with energy band structure of BGN near to the Fermi level was calculated. Carrier transport on BLG with width less than De-Broglie wave length which can be assumed as a one dimensional device is explored. Analytical model specifies that BGN carrier concentration in the degenerate limit strongly depends on normalized Fermi energy and independent on temperature as well. In the contrary this model illustrates exponential function of normalized Fermi energy clarifies carrier concentration in low carrier regime. In other words in the non-degenerate regime carrier concentration of BGNs is a function of temperature particularly in lower number of carrier concentration. Computational Nanoelectronics (CoNE) Research Group, Electrical Engineering Faculty, Universiti Teknologi Malaysia (UTM).
2010 Analysis of a Novel Full Adder Cell Designed for Implementing in Carbone Nanotube Technology
In this work, a novel full adder circuit is presented. The main aim is to reduce power delay product (PDP) in the presented full adder cell. A new method is used in order to design a full-swing full adder cell with low number of transistors. The proposed full adder is implemented in MOSFET like Carbon nanotube technology and the layout is provided based on standard 32 nm technology from MOSIS. The simulation results using HSPICE show that, there are substantial improvements in both power and performance of the proposed circuit compared to latest designs. In addition, the proposed circuit has been implemented in conventional 32 nm process to compare the benefits of using MOSFET like Carbon nanotubes in arithmetic circuits over conventional CMOS technology. The proposed circuit can be applied in very high performance and ultra low power applications. School of Electrical and Electronic Engineering, Universiti Sains Malaysia and Computational Nanoelectronics (CoNE) Research Group, Faculty of Electrical and Electronics, Universiti Teknologi Malaysia (UTM).
2010 Carbon Nanotube (CTN) Capacitance Model
In this work, fundamental results on carrier statistics in a carbon nanotube treated as a one dimensional material was presented. Also the effect of degeneracy on the capacitance of the carbon nanotube channel in a carbon nanotube field effect transistor was discussed. A quantum capacitance is revealed as well as a classical capacitance. Furthermore it was shown that for low gate voltage, the total capacitance is equivalent to the classical capacitance but for high gate voltage it is equivalent to the quantum capacitance. We predict that in the non-degenerate regime, the total capacitance is equivalent to the classical capacitance and that the quantum capacitance can be neglected, whereas only quantum capacitance needs to be taken into account in the calculation of the total capacitance in the degenerate regime. Computational Nanoelectronics (CoNE) Research Group, Electrical Engineering Faculty, Universiti Teknologi Malaysia (UTM).
2010 Biased Voltage Boundary Condition in Bilayer Graphene Nonoribbon (BGN)
In this research was shown that isolating properties appear in the limit of external applied voltage in BGNs. The gap between conduction and valance band which is opened by an applied electric field is strongly varied by the value of the external voltage. The band gap is opened for for V_ext^ =0 to V_ext^max where the conduction and valance band meet each other and overlap through the conduction and valance band. In this boundary condition, BGNs are expected to behave as an insulator. In contrast, beyond this boundary condition it is estimated to be semi-metallic. Also we showed changing the value of interlayer hopping strongly affected the maximum band gap and it creates a wider possible external electric field which opens the band gap in BGNs. Computational Nanoelectronics (CoNE) Research Group, Electrical Engineering Faculty, Universiti Teknologi Malaysia (UTM).
2010 Fabrication of Gas Sensor for Hydrogen using Porous GaN
I have experience doing some experimental research works in clean room to fabricate “Gas Sensor for Hydrogen using Porous GaN” which was collaboration with a PhD student from a group at UTM. In this period of time, I became more familiar with clean room condition, TEM & SEM (to take and analysis the images), and cleaning and growing process of semiconductors specifically Porous GaN on Silicon substrate. Computational Nanoelectronics (CoNE) Research Group Electrical Engineering Faculty, Universiti Teknologi Malaysia (UTM).
2010 Designing Fast Fourier Transform using Verilog and Simulation by Quartus II
A fast Fourier transform (FFT) is an efficient algorithm to compute the discrete Fourier transform (DFT) and its inverse. Designing the Fast Fourier Transform (FFT) of a digital input signal using Verilog program was dedicated in this study. This study is a new method to calculate FFT in verilog by some constrains. Output of program in Verilog shows no different with which Matlab dedicates. Also in this work, it is dedicated RTL design of a 16 bits multiplayer which must use to implement this work in RTL level. This project was course project of CAD for Electronic Design. Electrical Engineering Faculty, Universiti Teknologi Malaysia (UTM).
2009 Design a HAPS coverage to provide a footprint for the whole state of Perak
In this work I represent a HAPS coverage design to provide a footprint for the whole state of Perak in Malaysia. Assuming altitude 25 km for HAPs and minimum elevation angle 21.04 degree in edges leads radius 65 km coverage for each HAPS. Another point is 10 km from SPPs which gives 68.2 degree elevation angle. Using recommendations ITU-R F.1569, ITU-R P.618-9 and latitude and longitude of SPPs and 3 specific points this design provide full coverage of Perak. This project was course project of Special Topics in Telecommunication Systems. Electrical Engineering Faculty, Universiti Teknologi Malaysia (UTM).
2009 Interaction of Nano-particles with Electromagnetic Wave
This was a review on the effect of Interaction of Nanoparticles with Electromagnetic Wave done for Nanoelectronics Devices course. Electrical Engineering Faculty, Universiti Teknologi Malaysia (UTM).
2009 Review the Kind of Nanomaterials
This was a review on the kind of Nanomaterials done for Nanoelectronics Devices course. Electrical Engineering Faculty, Universiti Teknologi Malaysia (UTM).
2009 Digital Lock with keyboard and LCD implemented in LPC2103 ARM (ARM7)
In this poject I implemented Digital Lock with keyboard and LCD in LPC2103 ARM (ARM7) which after setting a password by user can be sued as a digital switch. This project was course project of Advance Microprocessor Systems. Electrical Engineering Faculty, Universiti Teknologi Malaysia (UTM).
2009 Simulation of Sending and Receiving Data in TCP Protocol Using Network Simulator version2 (NS2)
In this project there are three sources that send data through a gateway to the destination. They use TCP protocol for sending data. The bandwidth for each line is 1.8 Mbps and queue limitation in gateway is five. I have simulated this scenario using NS2 in Linux. This project was course project of Computer Networks. Electrical Engineering Faculty, Universiti Teknologi Malaysia (UTM).
2009 A Mail User Agent in Java
In this project it has been setup SMTP interaction between the MUA and the local SMTP server using JAVA language. There is a graphical user interface looks like other interfaces in which containing fields for entering the sender and recipient addresses, the subject of the message and the message itself. However, message should be sent from client to server using SMTP. This project was course project of Computer Networks. Electrical Engineering Faculty, Universiti Teknologi Malaysia (UTM).
2009 Very Small Aperture Terminal (VSAT) for Satellite Communication
This was a review on VSAT done for Satellite Communication course. Electrical Engineering Faculty, Universiti Teknologi Malaysia (UTM).
2005–2007 Car Passing Alarm System
I was the manager of Soroush, which is the name of a Car Passing Alarm System, project team. The goal of the project was designing a telecommunication system which would be installed on cars so as to reduce car accidents in roads by detecting cars coming from the opposite direction. It is especially useful when a driver wants to pass other cars. In this project, we mostly faced problems related to telecommunication systems in cars, such as the noises of car engines, the noises of other telecommunication tools, obstructive elements, and so on which was solved and implemented. Electrical Engineering Group, Tak Net Tazan Co., Tehran, Iran.
2004–2005 Simple Floppy Disk Controller
I designed a simple FDC chip from high-level specification to layout as a joint project with my friend, Mr. Masoud Zamani. Department of Computer Engineering, Amirkabir University of Technology, Tehran, Iran.