Graphene-FFET is promising as a future memory device

posted Aug 1, 2011, 7:53 AM by Hatef Sadeghi
Researchers at the University of California at Los Angeles have developed a new memory device based on Graphene. This is a ferroelectric-field-effect-transistor (FFET) in which graphene is used to write and read the electric dipole moments of an underlying ferroelectric material.

This graphene-FFET has a high fidelity and low operating voltage. Future work will focus on improving the speed of the device's performance.
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