Nanoribbons Break New Ground in Memory Storage Density

posted Nov 24, 2010, 12:11 AM by Hatef Sadeghi
Researchers from Germany, Switzerland and Italy have demonstrated that turning graphene into nanoribbons using V2O5 nanofibers as etching masks not only dramatically improves their memory storage density over silicon-based chips but also surpasses carbon nanotubes and graphene in their transition times.